SiC MOSFETs

 SiC MOSFETs
SiC MOSFETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many SiC MOSFET manufacturers including Infineon, Microchip, Navitas Semiconductor, onsemi, ROHM Semiconductor, STMicroelectronics, Wolfspeed & more.
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Please view our selection of SiC MOSFETs below.
Results: 1.327
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV 550In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L 286In Stock
100Expected 6/22/2026
Min.: 1
Mult.: 1

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 46 A 47 mOhms 21 V 4.8 V 79 nC - 40 C + 150 C 143.7 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 105A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 430In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C 312 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 750V 13m 4th Gen TO-247-4L 385In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 105 A 16.9 mOhms - 4 V, + 21 V 4.8 V 170 nC + 175 C Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TOLL 750V 80A SIC 441In Stock
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 80 A 4.8 V 123 nC + 175 V 277 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 439In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC - 40 C + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 420In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 42A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 42 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 800In Stock
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET 800In Stock
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 38 A 47 mOhms - 4 V, + 21 V 4.8 V 72 nC + 175 C 115 W Enhancement
ROHM Semiconductor SiC MOSFETs TOLL 750V 37A SIC 1.750In Stock
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 37 A 4.8 V 63 nC + 175 V 133 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 442In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 1200V, 32A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 427In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 32 A 65 mOhms - 4 V, + 21 V 4.8 V 71 nC + 175 C 136 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs TOLL 750V 26A SIC 882In Stock
Min.: 1
Mult.: 1
: 2.000
SMD/SMT TOLL-9 N Channel 1 Channel 750 V 26 A 4.8 V 48 nC + 175 V 100 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 750V, 25A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 447In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 750 V 25 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 700In Stock
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs 750V, 45m, 4-pin THD, Trench-structure, Silicon-carbide(SiC) power MOSFET 700In Stock
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 750 V 22 A 85 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 440In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 3-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 443In Stock
Min.: 1
Mult.: 1
Through Hole TO-247N-3 N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET 450In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 19A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 400In Stock
Min.: 1
Mult.: 1
Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 19 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 88 W Enhancement AEC-Q101
ROHM Semiconductor SiC MOSFETs Discrete Semiconductors, SiC Power Devices, 1200V, 17A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive 887In Stock
Min.: 1
Mult.: 1
: 1.000
SMD/SMT TO-263-7LA N-Channel 1 Channel 1.2 kV 17 A 117 mOhms - 4 V, + 21 V 4.8 V 48 nC + 175 C 71 W Enhancement AEC-Q101