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AIMZA75R008M1HXKSA1

Name: Infineon AIMZA75R008M1HXKSA1
Brand: Infineon Technologies
SKU: 726-AIMZA75R008M1HXK
Price: 37.68 EUR
Availability: InStock

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Mouser No:

726-AIMZA75R008M1HXK

Mfr. No:

AIMZA75R008M1HXKSA1

Mfr.:

Infineon Technologies

Description:

MOSFETs AUTOMOTIVE_SICMOS

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

AIMZA75R008M1HXKSA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies AIMZA75R008M1HXKSA1

In Stock: 190

Stock:: 190 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	37,68 €	37,68 €
	32,14 €	321,40 €
	26,51 €	2.651,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	SiC
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	163 A
Rds On - Drain-Source Resistance:	10.6 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	178 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	517 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	CoolSiC
Packaging:	Tube
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	16 ns
Product Type:	MOSFETs
Rise Time:	30 ns
Series:	G1
Factory Pack Quantity:	240
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	22 ns
Part # Aliases:	AIMZA75R008M1H -

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Datasheet

AIMZA75R008M1HXKSA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 750V G1 SiC Trench MOSFETs help EV makers create 11kW and 22kW bidirectional onboard chargers with increased efficiency, power density, and reliability. These devices operate reliably at high temperatures (T_j,max +175°C), featuring Infineon’s proprietary. XT die attach technology for best-in-class thermal impedance for an equivalent die size.