CSD22206W P-Channel NexFET Power MOSFETs

Texas Instruments CSD22206W P-Channel NexFET Power MOSFETs is a –8V, 4.7mΩ, 1.5mm×1.5mm device that is designed to deliver low on-resistance and gate charge in a small package. The device provides the smallest outline possible with excellent thermal characteristics. The low on-resistance coupled with the small footprint and low profile make the device ideal for battery-operated space-constrained applications.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Texas Instruments MOSFETs -8V P channel NexFE T power MOSFET sin A A 595-CSD22206WT 5.490In Stock
Cut Tape
0,955 €
0,44 €
0,39 €
0,301 €
Reel
0,235 €
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT DSBGA-9 P-Channel 1 Channel 8 V 5 A 9.1 mOhms 6 V 1.05 V 14.6 nC - 55 C + 150 C 1.7 W Enhancement NexFET Reel, Cut Tape, MouseReel
Texas Instruments MOSFETs -8V P channel NexFE T power MOSFET sin A A 595-CSD22206W 56In Stock
Cut Tape
1,84 €
0,912 €
0,709 €
Reel
0,709 €
0,611 €
Min.: 1
Mult.: 1
: 250
Si SMD/SMT DSBGA-9 P-Channel 1 Channel 8 V 2 A 9.1 mOhms 6 V 700 mV 14.6 nC - 55 C + 150 C 1.7 W Enhancement NexFET Reel, Cut Tape, MouseReel