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ISC034N08NM7ATMA1

Name: Infineon ISC034N08NM7ATMA1
Brand: Infineon Technologies
SKU: 726-ISC034N08NM7ATMA
Price: 2.35 EUR
Availability: InStock

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Mouser No:

726-ISC034N08NM7ATMA

Mfr. No:

ISC034N08NM7ATMA1

Mfr.:

Infineon Technologies

Description:

MOSFETs OptiMOS 7 PowerTransistor, 80 V

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

ISC034N08NM7ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies ISC034N08NM7ATMA1

In Stock: 2.344

Stock:: 2.344

Can Dispatch Immediately

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On Order:: 10.000
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,35 €	2,35 €
	1,51 €	15,10 €
	1,02 €	102,00 €
	0,869 €	434,50 €
	0,768 €	768,00 €
	0,757 €	1.892,50 €
Full Reel (Order in multiples of 5000)
	0,693 €	3.465,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PG-TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	122 A
Rds On - Drain-Source Resistance:	3.4 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	3.2 V
Qg - Gate Charge:	34 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	3.4 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	2.5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	13.8 ns
Typical Turn-On Delay Time:	8.6 ns
Part # Aliases:	ISC034N08NM7 SP006167256

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Datasheet

ISC034N08NM7ATMA1 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: China
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

N-Channel OptiMOS™ 7 80V Power MOSFETs

Infineon Technologies N-channel OptiMOS™ 7 80V Power MOSFETs are N-channel, normal level devices with superior thermal resistance. The OptiMOS 7 80V Power MOSFET series offers a soft-recovery body diode and is rated to 175°C. The Infineon OptiMOS 7 80V Power MOSFETs are available in a PG‑TDSON‑8 package and are optimized for motor drives and synchronous rectification applications.

N-Channel OptiMOS™ 7 Power MOSFETs

Infineon Technologies N-Channel OptiMOS™ 7 Power MOSFETs are high-performance N-channel transistors designed for demanding power conversion applications. These MOSFETs offer very low on-resistance, superior thermal resistance, and excellent Miller ratio for dv/dt ruggedness. The OptiMOS™ 7 power MOSFETs are optimized for both hard-switching and soft-switching topologies, and FOM_oss. These MOSFETs are 100% avalanche tested and are RoHS compliant. The OptiMOS™ 7 power MOSFETs are halogen-free according to IEC61249‑2‑21.