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Nexperia PSC1065B1 Silicon Carbide (SiC) Schottky Diodes

Nexperia PSC1065B1 Silicon Carbide (SiC) Schottky Diodes are designed for ultra-high performance, low loss, and high-efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivers zero recovery switching behavior integrated with an excellent figure-of-merit (QC x VF). The PSC1065B1 Diode enhances the robustness described in a high IFSM. These diodes are ideal for AC-DC converters, DC-DC converters, photovoltaic inverters, telecom power supplies.

Features

  • Zero forward and reverse recovery
  • Temperature-independent fast and smooth switching performance
  • Outstanding figure-of-merit (Qc x VF)
  • High IFSM capability
  • High power density
  • Reduced system cost
  • System miniaturization
  • Reduced EMI

Applications

  • Switch Mode Power Supply (SMPS)
  • AC-DC and DC-DC converter
  • Battery charging infrastructure
  • Server and telecom power supply
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic inverters
Chart - Nexperia PSC1065B1 Silicon Carbide (SiC) Schottky Diodes

Associated Products

Nexperia PSC1065K Silicon Carbide (SiC) Schottky Diodes

Features ultra-high performance, low loss, and high-efficiency power conversion.

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Nexperia PSC1065H SiC Schottky Diodes

Combine high performance and efficiency with low energy loss for power conversion applications.

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Typical Application

Application Circuit Diagram - Nexperia PSC1065B1 Silicon Carbide (SiC) Schottky Diodes
Published: 2024-06-19 | Updated: 2026-01-06