Nexperia DFN0606 Trench MOSFETs

Nexperia DFN0606 Trench MOSFETs are designed to utilize Trench MOSFET technology to provide low threshold voltage and very fast switching. These Nexperia MOSFETs feature electrostatic discharge (ESD) protection and are available in a leadless ultra-small DFN0606-3 (SOT8001) surface-mount (SMD) plastic package. Typical applications include mobile phones, wearable and portable devices, mobile phone accessories, headsets, earphones, and hearing aids.

Features

  • Low threshold voltage
  • Very fast switching
  • Trench MOSFET technology
  • 2N7002 functionality in a DFN0606 package
  • 36% space saving compared to DFN1006
  • Up to 2kV ESD protection
  • 0.6mm x 0.6mm footprint, 0.37mm height

Specifications

  • Ultra-low RDS(on) down to 170mΩ
  • Low voltage drive (VGS(th)= 0.7V typical)
  • 20V to 60V voltage range

Applications

  • Mobile phones
  • Wearable and portable devices
  • Mobile phone accessories
  • Headsets, earphones, and hearing aids

Videos

Application Circuit Diagram

Application Circuit Diagram - Nexperia DFN0606 Trench MOSFETs
View Results ( 11 ) Page
Part Number Datasheet Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge
NX5008NBKHH NX5008NBKHH Datasheet 50 V 350 mA 2.8 Ohms 900 mV 470 pC
PMH1200UPEH PMH1200UPEH Datasheet 30 V 520 mA 1.6 Ohms 950 mV 400 pC
PMH850UPEH PMH850UPEH Datasheet 30 V 600 mA 1 Ohms 950 mV 600 pC
NX138BKHH NX138BKHH Datasheet 60 V 380 mA 2.3 Ohms 1.5 V 500 pC
NX7002BKHH NX7002BKHH Datasheet 60 V 350 mA 2.8 Ohms 1.1 V 1 nC
PMH260UNEH PMH260UNEH Datasheet 20 V 1.2 A 310 mOhms 950 mV 630 pC
PMH550UNEH PMH550UNEH Datasheet 30 V 770 mA 670 mOhms 450 mV 400 pC
PMH550UPEH PMH550UPEH Datasheet 20 V 800 mA 640 mOhms 950 mV 600 pC
PMH600UNEH PMH600UNEH Datasheet 20 V 800 mA 620 mOhms 450 mV 310 pC
PMH950UPEH PMH950UPEH Datasheet 20 V 530 mA 1.4 Ohms 950 mV 290 pC
Published: 2020-05-21 | Updated: 2024-05-03