Nexperia DFN0606 Trench MOSFETs
Nexperia DFN0606 Trench MOSFETs are designed to utilize Trench MOSFET technology to provide low threshold voltage and very fast switching. These Nexperia MOSFETs feature electrostatic discharge (ESD) protection and are available in a leadless ultra-small DFN0606-3 (SOT8001) surface-mount (SMD) plastic package. Typical applications include mobile phones, wearable and portable devices, mobile phone accessories, headsets, earphones, and hearing aids.Features
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- 2N7002 functionality in a DFN0606 package
- 36% space saving compared to DFN1006
- Up to 2kV ESD protection
- 0.6mm x 0.6mm footprint, 0.37mm height
Specifications
- Ultra-low RDS(on) down to 170mΩ
- Low voltage drive (VGS(th)= 0.7V typical)
- 20V to 60V voltage range
Applications
- Mobile phones
- Wearable and portable devices
- Mobile phone accessories
- Headsets, earphones, and hearing aids
Videos
Application Note
Additional Resources
Application Circuit Diagram
View Results ( 11 ) Page
| Part Number | Datasheet | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge |
|---|---|---|---|---|---|---|
| NX5008NBKHH | ![]() |
50 V | 350 mA | 2.8 Ohms | 900 mV | 470 pC |
| PMH1200UPEH | ![]() |
30 V | 520 mA | 1.6 Ohms | 950 mV | 400 pC |
| PMH850UPEH | ![]() |
30 V | 600 mA | 1 Ohms | 950 mV | 600 pC |
| NX138BKHH | ![]() |
60 V | 380 mA | 2.3 Ohms | 1.5 V | 500 pC |
| NX7002BKHH | ![]() |
60 V | 350 mA | 2.8 Ohms | 1.1 V | 1 nC |
| PMH260UNEH | ![]() |
20 V | 1.2 A | 310 mOhms | 950 mV | 630 pC |
| PMH550UNEH | ![]() |
30 V | 770 mA | 670 mOhms | 450 mV | 400 pC |
| PMH550UPEH | ![]() |
20 V | 800 mA | 640 mOhms | 950 mV | 600 pC |
| PMH600UNEH | ![]() |
20 V | 800 mA | 620 mOhms | 450 mV | 310 pC |
| PMH950UPEH | ![]() |
20 V | 530 mA | 1.4 Ohms | 950 mV | 290 pC |
Published: 2020-05-21
| Updated: 2024-05-03

