Toshiba TBC8x7 Bipolar Junction Transistors
Toshiba TBC8x7 Bipolar Junction Transistors (BJTs) are available in both NPN and PNP polarities. These transistors are offered in a compact, surface-mount SOT23-3 package. Toshiba TBC8x7 BJTs feature a wide storage temperature (Tstg) range of -55°C to +150°C and a junction temperature (TJ)of +150°C. These transistors are ideal for use in low-frequency amplifiers and communication devices.
Features
- TBC847
- Silicon NPN epitaxial
- 60V collector-base voltage (VCBO)
- 50V collector- emitter voltage (VCEO)
- 6V emitter-base voltage (VEBO)
- 150mA DC collector current (IC)
- 200mA pulsed collector current (ICP)
- 30mA base current (IB)
- 320mW collector power dissipation (PC)
- TBC857
- Silicon PNP epitaxial
- -50V collector-base voltage (VCBO)
- -50V collector-emitter voltage (VCEO)
- -5V emitter-base voltage (VEBO)
- -150mA DC collector current (IC)
- -200mA pulsed collector current (ICP)
- -30mA base current (IB)
- 320mW collector power dissipation (PC)
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Toshiba Bipolar Transistors
Pre-biased transistors designed for low noise and low saturation voltage applications.
Published: 2016-10-12
| Updated: 2022-03-11