STMicroelectronics STripFET F8 N-Channel Power MOSFETs
STMicroelectronics STripFET F8 N-Channel Power MOSFETs are AEC-Q101 qualified and offer a comprehensive package solution from 30V to 150V to meet all the requirements for very high-power-density solutions. These low-voltage MOSFETs feature STPOWER STripFET F8 technology. STripFET F8 technology saves energy and ensures low noise in power conversion, motor control, and power distribution circuits by cutting both on-resistance and switching losses while optimizing body-diode properties. The STMicroelectronics STripFET F8 N-Channel Power MOSFETs simplify system designs and increase efficiency in applications such as automotive, computer / peripherals, data centers, telecom, solar, power supplies / converters, battery chargers, home / professional appliances, gaming, drones, and more.
Features
- AEC-Q101 qualified (parts ending in AG)
- Very low conduction losses with increased efficiency and more compact designs
- Body diode softness and low gate-drain charge to ensure excellent switching behavior
- Tighter gate threshold voltage spread for easier parallel connections
- Low EMI emissions
- Moisture Sensitivity Level (MSL) 1
- -55°C to +175°C operating temperature range
- 100% avalanche tested
- Wettable flank, PowerFLAT 5mm x 6mm package
- Sustainable technology
Applications
- STL160N10F8
- Server and telecom power
- Industrial battery management system (BMS)
- Power tools
- Drones
- STL170N4LF8 and STL300N4LF8
- Industrial tools, motor drives, and equipment
- Industrial motor control
- Power supplies and converters
- STL175N4LF8AG, STL305N4LF8AG, STL165N4F8AG, and STK615N4F8AG
- Automotive motor control
- Body and convenience
- Chassis and safety
- Power train for ICE
- Switching applications for STL120N10F8, STL320N4LF8, STL325N4LF8AG, and STL325N4LF8AG
Specifications
- 40V or 100V maximum drain-source voltage options
- ±16V or ±20V maximum gate-source voltage options
- 304A to 1492A maximum drain current range
- 111W to 188W total power dissipation range
- Single pulse avalanche
- 60A current
- 140mJ to 590mJ energy range
- Dynamic
- 2600pF to 7657pF input capacitance range
- 680pF to 1968pf output capacitance range
- On/off states
- 1µA to 100µA zero gate voltage drain current range
- 100nA gate-body leakage current
- 1.2V to 4V maximum gate threshold voltage range
- 0.75mΩ to 4.6mΩ maximum static drain-source on-resistance
Videos
Featured MOSFETS
STMicroelectronics STL120N10F8 100V N-Channel STripFET MOSFET
The device utilizes ST's STripFET F8 technology featuring an enhanced trench gate structure.
STMicroelectronics STL325N4LF8AG N-Channel Power MOSFET
Utilizes STripFET F8 technology and features an enhanced trench gate structure.
STMicroelectronics STL320N4LF8 N-Channel STripFET F8 Power MOSFET
Manufactured with STripFET F8 trench MOSFET technology.
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| Part Number | Datasheet | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Pd - Power Dissipation | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge |
|---|---|---|---|---|---|---|---|---|
| STL325N4LF8AG |  |
|||||||
| STL320N4LF8 | |
40 V | 360 A | 800 uOhms | 188 W | - 20 V, 20 V | 2 V | 43 nC |
| STK615N4F8AG | |
|||||||
| STL165N4F8AG | |
40 V | 154 A | 2.6 mOhms | 111 W | - 20 V, 20 V | 4 V | 28 nC |
| STL300N4F8 | |
290 A | 1.1 mOhms | |||||
| STL165N10F8AG | |
100 V | 158 A | 3.2 mOhms | 167 W | - 20 V, 20 V | 4 V | 90 nC |
| STL120N10F8 | |
100 V | 125 A | 4.6 mOhms | 150 W | - 20 V, 20 V | 2 V | 56 nC |
| STL160N10F8 | |
100 V | 158 A | 3.2 mOhms | 167 W | - 20 V, 20 V | 4 V | 90 nC |
| STL300N4LF8 | |
40 V | 304 A | 1 mOhms | 167 W | - 20 V, 20 V | 2 V | 70 nC |
| STL325N4F8AG | |
40 V | 373 A | 1.1 mOhms | 188 W | - 16 V, 16 V | 2 V | 95 nC |