STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor
STMicroelectronics SGT080R70ILB E-Mode PowerGaN Transistor is an enhancement-mode transistor designed for high-efficiency power conversion applications. Featuring a drain-source voltage rating of 700V and a typical on-resistance of just 80mΩ, the STMicroelectronics SGT080R70ILB leverages the superior switching performance of Gallium Nitride (GaN) technology to minimize conduction and switching losses. Housed in a compact PowerFLAT 8x8 HV package, the transistor supports high-frequency operation and is ideal for use in resonant converters, power factor correction (PFC) stages, and DC-DC converters. A low gate charge and output capacitance enable faster transitions and reduced energy dissipation, making the SGT080R70ILB well-suited for demanding applications in consumer electronics, industrial systems, and data centers.
Features
- Enhancement mode normally off transistor
- Very high switching speed
- High power management capability
- Extremely low capacitances
- Kelvin source pad for optimum gate driving
- Zero reverse recovery charge
- ESD safeguard
- RoHS compliant
Applications
- Consumer electronics
- Industrial systems
- Data centers
- Adapters for tablets, notebooks, and AIO
- USB Type-C® PD adapters and quick chargers
- AC-DC converters
- DC-DC converters
- Resonant converters
- Power Factor Correction (PFC) stages
Specifications
- 700V maximum drain-source voltage
- 800V maximum transient drain-source voltage at tp < 200μs
- -6V to 7V maximum gate-source voltage
- 29A maximum continuous drain current at +25°C
- 58A maximum pulse drain current at tp = 10μs
- 188W maximum total power dissipation at +25°C
- 2.3V typical source-drain reverse conduction voltage
- Switching
- 3ns typical turn-on delay time
- 4ns typical rise time
- 5ns typical turn-off delay time
- 4ns typical fall time
- Static
- 390μA maximum drain-source leakage current
- 163μA typical gate-source leakage current
- 1.2V to 2.5V gate threshold voltage range
- 80mΩ maximum static drain-source on-resistance
- 2kV Human Body Model (HBM) ESD protection
- -55°C to +150°C operating junctin temperature range
- Dynamic
- 225pF typical input capacitance
- 70pF typical output capacitance
- 0.5pF typical reverse transfer capacitance
- 105pF typical equivalent output capacitance, energy related
- 150pF typical equivalent output capacitance, time related
- 3Ω typical intrinsic gate resistance
- 2.2V typical gate plateau voltage
- 6.2nC typical total gate charge
- 0.5nC typical gate-source charge
- 2.2nC typical gate-drain charge
- 0nC typical reverse recovery charge
- 60nC typical output charge
- Thermal resistance
- 0.52°C/W junction-to-case
- 33.6°C/W junction-to-ambient
Schematic
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