NXP Semiconductors A3G26D055N Evaluation Board
NXP Semiconductors A3G26D055N Evaluation Board is used with the A3G26D055N Airfast® RF Power GaN Transistor. The board is designed for 64T, 320W radio units (5W avg. at each antenna). Its target band is n41 and has an unmatched output that makes it fit for multiple frequencies.
Features
- 48V GaN discrete transistor
- At 8.2 dB OBO
- 39dBm avg. (8W)
- 18dB gain
- 54% drain efficiency (Doherty)
- 700-2690MHz
- 47.2dBm peak (55W)
- DFN 7 x 6.5 over-molded plastic package
- Symmetric, input pre-matched, output unmatched
Typical Lineup
Published: 2022-04-26
| Updated: 2022-12-02