Nexperia LFPAK88 Trench 9 Automotive MOSFETs

Nexperia LFPAK88 Trench 9 Automotive MOSFETs provide an alternative to D2PAK by delivering an industry-leading power density in an innovative 8mm x 8mm footprint. These Nexperia MOSFETs deliver 2x higher continuous current ratings, ultimate thermal performance and reliability, and up to 60% space efficiency. Nexperia LFPAK88 Trench 9 Automotive MOSFETs are available in automotive AEC-Q101 and industrial grades.

Features

  • Fully automotive qualified beyond AEC-Q101
  • -55°C to +175°C rating suitable for thermally demanding environments
  • LFPAK88 package
    • Designed for a smaller footprint and improved power density over older wire bond packages such as D2PAK for today’s space-constrained high-power automotive applications
    • Thin package and copper clip enable LFPAK88 to be highly efficient thermally
  • LFPAK copper clip technology enables improvements over wire bond packages by
    • Increased maximum current capability and excellent current spreading
    • Improved RDS(on)
    • Low source inductance
    • Low thermal resistance Rth
  • LFPAK Gull Wing leads
    • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joint
  • Unique 40V Trench 9 superjunction technology
    • Reduced cell pitch and superjunction platform enable lower RDSon in the same footprint
    • Improved SOA and avalanche capability compared to standard TrenchMOS
    • Tight VGS(th) limits enable easy paralleling of MOSFETs

Applications

  • 12V automotive systems
  • 48V DC/DC systems on 12V secondary side
  • Higher power motors, lamps and solenoid control
  • Reverse polarity protection
  • LED lighting
  • Ultra high-performance power switching

LFPAK88 Call-Outs

Chart - Nexperia LFPAK88 Trench 9 Automotive MOSFETs

Videos

View Results ( 9 ) Page
Part Number Datasheet Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge
BUK7S1R2-40HJ 43 V 300 A 2.6 mOhms 80 nC
BUK7S2R5-40HJ 40 V 140 A 2.5 mOhms 38 nC
PSMN1R5-50YLHX 50 V 200 A 1.75 mOhms 117 nC
BUK7S0R5-40HJ 40 V 500 A 500 uOhms 190 nC
BUK7S1R0-40HJ 40 V 325 A 1 mOhms 98 nC
BUK7S1R5-40HJ 43 V 260 A 3.27 mOhms 67 nC
PSMN2R0-55YLHX 55 V 200 A 2.1 mOhms 119 nC
BUK7S2R0-40HJ 40 V 190 A 2 mOhms 50 nC
BUK7S0R7-40HJ 40 V 425 A 700 uOhms 144 nC
Published: 2020-08-21 | Updated: 2024-05-03