Microchip Technology MSC025SMA330B4N N-Channel mSiC™ MOSFET
Microchip Technology MSC025SMA330B4N N-Channel mSiC™ MOSFET is a 3300V discrete silicon carbide power MOSFET in the MA Family. The device employs a TO-247-4 Notch package and supports high-voltage switching in demanding power-electronics designs. The MSC025SMA330B4N is developed to reduce conduction losses and improve system efficiency via low on-state resistance and reliable switching performance. Microchip Technology MSC025SMA330B4N N-Channel mSiC MOSFET also offers low capacitances, low gate charge, fast switching speed, and stable operation at elevated junction temperatures.
The Microchip MSC025SMA330B4N N-Channel mSiC MOSFET is excellent for high-voltage applications that need efficient, compact, and rugged SiC power switching. The MOSFETs support medium- to high-voltage systems across aerospace, e-mobility, industrial, and renewable energy applications.
Features
- N-channel discrete mSiC™ MOSFET in the Microchip MA Family
- Low on-resistance to help reduce conduction losses and improve thermal performance
- High-frequency operation with reduced switching losses compared to IGBTs and traditional silicon MOSFETs
- Low capacitances and gate charge for efficient high-speed switching
- Fast switching speed supported by low internal gate resistance
- Fast, low-recovery body diode for reliable hard-commutation operation
- Superior avalanche ruggedness and short-circuit withstand time for improved system reliability
- RoHS compliant
Applications
- High-voltage power systems
- Aerospace power designs
- E-mobility systems
- Industrial power systems
- Renewable energy
Specifications
- Drain-source voltage of 3300V
- Gate drive voltage range of 18V to 20V
- On-state resistance of 25mΩ at VGS = 20V
- Maximum continuous drain current of 106A
- Output capacitance of 186pF
- Junction temperature range of -55°C to +150°C
- TO-247-4 Notch package
Package Style
