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EPC EPC2367 eGaN® FETs

EPC EPC2367 Enhancement-Mode Gallium Nitride Field-Effect Transistors (eGaN® FETs) are 100V power transistors optimized for efficient power conversion. The EPC FETs feature a typical 1.2mΩ on-resistance, 101A continuous current capability, ultra-low gate charge, and zero reverse-recovery charge. These characteristics enable high switching frequencies while minimizing conduction and switching losses.

The EPC2367 FETs are designed for high-frequency DC-DC conversion, high-power-density DC-DC modules, motor drives, and synchronous rectification applications. The devices operate with a typical 5V gate drive and require no negative gate voltage. A compact 3.3mm × 3.3mm footprint, excellent thermal performance, and ultra-high efficiency help designers reduce system size while maximizing power density.

Features

  • Ultra-high efficiency
  • No reverse recovery
  • Easy-to-use and reliable gate
  • Ultra-low QG
  • Top of FET is electrically connected to source
  • Small 3.3mm x 3.3mm package size
  • Excellent thermal resistance
  • Lead-free, Halogen-free, and RoHS-compliant

Applications

  • High-frequency DC-DC conversion
  • High-power-density DC-DC modules
  • Motor drives
  • Synchronous rectification

Specifications

  • Maximum ratings
    • Drain-to-source voltage
      • 100V continuous
      • 120V repetitive transient
    • Drain-source current
      • 101A continuous (TJ <+125°C)
      • 420A pulsed at +25°C, TPULSE = 10µs
      • 336A pulsed at +125°C, TPULSE = 10µs
    • -4V to 6V gate-to-source voltage rnage
    • -40°C to +150°C operating temperature range
  • Static characteristics
    • 100V minimum drain-to-source voltage
    • 0.2mA maximum drain-source leakage, 0.01mA typical
    • 2.9mA to 6.5mA maximum gate-to-source forward leakage range, 0.03mA to 0.10mA typical range
    • 0.2mA maximum gate-to-source reverse leakage, 0.002mA typical
    • 0.8V to 2.5V gate threshold voltage range, 1.1V typical
    • 1.5mΩ maximum drain-source on resistance, 1.2mΩ typical
    • 1.4V typical source-to-drain forward voltage
  • Typical thermal resistance
    • 0.5°C/W junction-to-case (case TOP)
    • 2.4°C/W junction-to-board (case BOTTOM)
    • 50°C/W junction-to-ambient (using JEDEC 51-2 PCB)
    • 29°C/W junction-to-ambient (using EPC90164 EVB)
  • Dynamic characteristics
    • 2736pF maximum input capacitance, 2170pF typical
    • 8pF typical reverse transfer capacitance
    • 782pF maximum output capacitance, 590pF typical
    • Effective output capacitance
      • 857pF typical energy-related
      • 1080pF time related
    • 0.6Ω typical gate resistance
    • 20nC maximum total gate charge, 17nC typical
    • 5.3nC typical gate-to-source charge
    • 2.4nC typical gate-to-drain charge
    • 3.8nC typical gate charge at threshold
    • 63nC maximum output charge, 54nC typical
    • 0nC typical source-drain recovery charge

Dimensions

Mechanical Drawing - EPC EPC2367 eGaN® FETs
Published: 2026-10-20 | Updated: 2026-10-21