Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs
Diotec Semiconductor MMBT7002K N-Channel Enhancement Mode FETs offer ESD-protected gate fast switching times ideal for signal processing, logic level converter, and driver applications. The MMBT7002K features a 60V drain-source voltage, 20V gate-source voltage, and 350mW power dissipation. The devices are available in a SOT-23 package and operate at an -55C to 150C junction temperature. The Diotec MMBT7002K N-Channel Enhancement Mode FETs are compliant with RoHS, REACH, and conflict minerals.
Features
- ESD protected gate fast switching times
- Compliant to RoHS (w/o exemption), REACH, conflict minerals
Applications
- Signal processing, logic level converter, drivers
- Commercial grade
- Suffix -Q: AEC-Q101 compliant
- Suffix -AQ: in AEC-Q101 qualification
Specifications
- 60V Drain source voltage
- 20V Gate source voltage
- 350mW Power dissipation
- 300mA Drain current
- 800mA Peak drain current
- -55°C to 150°C Junction temperature
Package/Circuit Application
Dimensions mm
Additional Resources
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Published: 2022-04-29
| Updated: 2023-02-06