TO-247-3 RF MOSFET Transistors

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
Datasheet
63In Stock
Min.: 1
Mult.: 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source
Datasheet
82In Stock
Min.: 1
Mult.: 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
Datasheet
377In Stock
Min.: 1
Mult.: 1

N-Channel Si 9 A 500 V 100 MHz 15 dB 100 W - 55 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors MHT1803B
NXP Semiconductors RF MOSFET Transistors 300W 200MHZ TO-247-3L 277In Stock
Min.: 1
Mult.: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 300 W + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source
Datasheet
18In Stock
30Expected 10/19/2026
Min.: 1
Mult.: 1

N-Channel Si 9 A 500 V 100 MHz 15 dB 100 W - 55 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
170Expected 8/17/2026
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V
237Expected 10/8/2026
Min.: 1
Mult.: 1
N-Channel Si 1.8 MHz to 50 MHz 28.2 dB 330 W + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source
Datasheet
Lead-Time 24 Weeks
Min.: 1
Mult.: 1

N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 25
Mult.: 1

Si Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264
Datasheet
Non-Stocked Lead-Time 24 Weeks
Min.: 25
Mult.: 1

N-Channel Si 13 A 1 kV 1 Ohms 45 MHz 16 dB 300 W - 55 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
Lead-Time 53 Weeks
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
ZiLOG RF MOSFET Transistors IXZR16N60 16A 600V N Channel ZMOS Switch MOSFET ISO Plus 247
Datasheet
Non-Stocked
Min.: 30
Mult.: 30

N-Channel Si 18 A 600 V 530 mOhms 350 W - 55 C + 175 C Through Hole TO-247-3 Tube