TGS2355-SM

Qorvo
772-TGS2355-SM
TGS2355-SM

Mfr.:

Description:
RF Switch ICs .5-6GHz SPDT 100 Watt GaN

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Switch ICs
RoHS:  
SPDT
500 MHz
6 GHz
1.1 dB
40 dB
- 40 C
+ 85 C
SMD/SMT
QFN-32
Si
TGS2355
Tray
Brand: Qorvo
High Control Voltage: - 48 V
Moisture Sensitive: Yes
Number of Switches: Single
Operating Supply Current: 1 mA
Pd - Power Dissipation: 35 W
Product Type: RF Switch ICs
Factory Pack Quantity: 50
Subcategory: Wireless & RF Integrated Circuits
Part # Aliases: TGS2355 1097064
Unit Weight: 5,058 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

Compliance Codes
TARIC:
8542399000
CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
United States
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TGS2355-SM High Power GaN Switch

Qorvo TGS2355-SM High Power GaN Switch is a single-pole, double-throw (SPDT) reflective switch that operates from 0.5GHz to 6.0GHz. Fabricated on Qorvo's 00.25µm GaN (Gallium Nitride) on SiC (Silicon Carbide) production process (QGaN25), the TGS2355-SM provides up to 100W input power handling with <1.1dB insertion loss over most of the operating band and greater than 40dB isolation. These qualities make the TGS2355-SM GaN Switch ideal for high-power switching applications across both defense and commercial platforms.

GaN Switches

Qorvo Gallium Nitride (GaN) Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FETs are able to use the same circuit architectures to handle power levels on the order of tens of watts.

In Stock: 195

Stock:
195 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
231,83 € 231,83 €
229,54 € 2.295,40 €
173,45 € 4.336,25 €