GaN Integrated Circuits - ICs

Results: 395
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS
Fairview Microwave RF Amplifier 4.4 GHz to 5.1 GHz, SMA, GaN Bi-Directional Amplifier, C-Band, 10W Psat, 10dB Tx Gain, 20% Efficiency, 2 microsec speed, Manual T/R Control Non-Stocked Lead-Time 6 Weeks
Min.: 1
Mult.: 1
Mini-Circuits RF Amplifier SMT MMIC, Low Noise, Linear, pHEMT Amplifier, 500 MHz to 2500 MHz, 50ohm Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1
: 500

CML Micro RF Amplifier 5.5W Ka-Band GaN Power Amplifier Non-Stocked Lead-Time 27 Weeks
Min.: 500
Mult.: 500
: 500
STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers 600 V half-bridge enhancement mode GaN HEMT with high voltage driver Non-Stocked Lead-Time 26 Weeks
Min.: 1.560
Mult.: 1.560

STMicroelectronics Gate Drivers High power density 600 V half-bridge driver with two enhancement mode GaN power Non-Stocked Lead-Time 52 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

STMicroelectronics Gate Drivers High voltage, high-speed half-bridge gate driver for GaN power switches Non-Stocked Lead-Time 40 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Microchip Technology RF Amplifier 2.7-3.5 GHz 70W GaN PA MMIC
Non-Stocked
Min.: 1
Mult.: 1

Texas Instruments Gate Drivers Automotive 7A and 5A single-channel gate Non-Stocked Lead-Time 26 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

Texas Instruments Gate Drivers 650V 105mohm GaN hal f-bridge with integ
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 650V 95mohm GaN half -bridge with integr Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 2.000
Texas Instruments Gate Drivers SMART 140 MOHM E-GAN FET WITH DRIVER 19-VQFN Non-Stocked Lead-Time 26 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 50m? GaN with integrated driver an A 595-LMG3411R050RWHT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3422R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 50-m? GaN FET with integrated driv
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600-V 30-m? GaN FET with integrated driv LMG3425R030RQZT Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 600V 30mohm GaN FET with integrated driv Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 600V 50mohm GaN FET with integrated driv Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 650-V 30-m? GaN FET with integrated driv
Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

Texas Instruments Gate Drivers 650V 25m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 650V 35m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 650V 70m? TOLL-packa ged GaN FET with in Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000
Texas Instruments Gate Drivers 5A/5A dual-channel g ate driver with 4V Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1
: 5.000
Fairview Microwave RF Amplifier 40 dB Gain GaN Power Amplifier at 4 Watt P1dB Operating from 20 MHz to 1 GHz with 44 dBm IP3, 32% PAE, 6 dB NF, SMA, with Heatsink Non-Stocked
Min.: 1
Mult.: 1