Power Modules MOSFET Modules

Results: 19
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging
STMicroelectronics MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
Datasheet
124In Stock
Min.: 1
Mult.: 1

Press Fit 6 Channel 30 A 60.5 mOhms 1.2 kV - 10 V, 22 V - 40 C + 175 C Tube
STMicroelectronics MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
Datasheet
127In Stock
Min.: 1
Mult.: 1

Press Fit 6 Channel 1.2 kV 30 A 114 mOhms - 10 V, + 22 V 5 V - 40 C + 175 C Tube
SemiQ MOSFET Modules Gen3 1200V 8mohm SiC MOSFET & SBD Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 189 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMS Tube
SemiQ MOSFET Modules Gen3 1200V 16mohm SiC MOSFET & SBD Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMS Tube
SemiQ MOSFET Modules Gen3 1200V 40mohm SiC MOSFET & SBD Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMS Tube
SemiQ MOSFET Modules Gen3 1200V 80mohm SiC MOSFET & SBD Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMS Tube
SemiQ MOSFET Modules Gen3 1200V 8mohm SiC MOSFET Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 188 A 12 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 536 W GCMX Tube
SemiQ MOSFET Modules Gen3 1200V 16mohm SiC MOSFET Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 103 A 23 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 303 W GCMX Tube
SemiQ MOSFET Modules Gen3 1200V 40mohm SiC MOSFET Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 53 A 52 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 183 W GCMX Tube
SemiQ MOSFET Modules Gen3 1200V 80mohm SiC MOSFET Module, SOT-227
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

SiC Screw Mount SOT-227-4 N-Channel 1 Channel 1.2 kV 28 A 100 mOhms - 8 V, + 22 V 4 V - 55 C + 175 C 118 W GCMX Tube
STMicroelectronics MOSFET Modules Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 12
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 132
Mult.: 132

Press Fit 6 Channel 1.2 kV 30 A 114 mOhms - 10 V to + 22 V 5 V - 40 C + 175 C Tube
GeneSiC Semiconductor MOSFET Modules 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor MOSFET Modules 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor MOSFET Modules 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor MOSFET Modules 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor MOSFET Modules 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor MOSFET Modules 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Non-Stocked Lead-Time 26 Weeks
Min.: 48
Mult.: 48

3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray