Dual Common Source IGBT Modules

Results: 4
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Microchip Technology IGBT Modules PM-IGBT-SBD-BL1
Datasheet
4In Stock
Min.: 1
Mult.: 1
IGBT Modules Dual Common Source 1.2 kV 2.4 V 110 A 150 nA 375 W - 55 C + 175 C
onsemi NXH300B100H4Q2F2PG
onsemi IGBT Modules MASS MARKET 250KW 1500V Q2 3 LEVEL BOOST
Datasheet
72Factory Stock Available
More Info Available
Min.: 36
Mult.: 36

SiC IGBT Modules Dual Common Source 1 kV 1.8 V 73 A 400 nA 194 W - 40 C + 150 C Tray
Microchip Technology APTGT100DU170TG
Microchip Technology IGBT Modules PM-IGBT-TFS-SP4
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 8
Mult.: 1

IGBT Modules Dual Common Source 1.7 kV 2 V 150 A 400 nA 560 W SP4 - 40 C + 100 C Tube
Microchip Technology APTGT200DU120G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5
Mult.: 1

IGBT Modules Dual Common Source 1.2 kV 1.7 V 280 A 500 nA 890 W SP6 - 40 C + 100 C Tube