Dual Common Emitter IGBT Modules

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Package/Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 4
Mult.: 1

IGBT Power Modules Dual Common Emitter 1.7 kV 1.7 V 385 A 150 nA 1.034 kW - 40 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 3
Mult.: 1

IGBT Power Modules Dual Common Emitter 1.7 kV 1.7 V 750 A 200 nA 1.948 kW - 40 C + 175 C
Microchip Technology IGBT Modules PM-IGBT-TFS-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 9
Mult.: 1

IGBT Power Modules Dual Common Emitter 1.7 kV 1.7 V 145 A 150 nA 524 W - 40 C + 175 C
Microchip Technology APTGLQ200HR120G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5
Mult.: 1

IGBT Modules Dual Common Emitter 600 V, 1.2 kV 1.5 V, 2.05 V 150 A, 300 A 400 nA, 480 nA 340 W, 1 kW SP6 - 40 C + 100 C Tube
Microchip Technology APTGLQ40HR120CT3G
Microchip Technology IGBT Modules PM-IGBT-TFS-SBD-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 14
Mult.: 1

IGBT Modules Dual Common Emitter 600 V, 1.2 kV 1.5 V, 2.05 V 75 A, 80 A 120 nA, 600 nA 176 W, 250 W SP3F-32 - 40 C + 100 C Tube
Microchip Technology APTGLQ80HR120CT3G
Microchip Technology IGBT Modules PM-IGBT-TFS-SBD-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 9
Mult.: 1

IGBT Modules Dual Common Emitter 600 V, 1.2 kV 1.5 V, 2.05 V 100 A, 150 A 240 nA, 600 nA 250 W, 500 W - 40 C + 100 C Tube
Microchip Technology APTGX100DU120T3AG
Microchip Technology IGBT Modules PM-IGBT-TFS-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 9
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 185 A 150 nA 576 W SP3F - 40 C + 125 C
Microchip Technology APTGX150DU120T3AG
Microchip Technology IGBT Modules PM-IGBT-TFS-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 8
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 260 A 150 nA 777 W SP3F - 40 C + 125 C
Microchip Technology APTGX200DU120T3AG
Microchip Technology IGBT Modules PM-IGBT-TFS-SP3F
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 7
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 350 A 150 nA 980 W SP3F - 40 C + 125 C
Microchip Technology APTGX300DU120T6G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 5
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 415 A 200 nA 1.02 kW SP6C - 40 C + 125 C
Microchip Technology APTGX450DU120T6G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 4
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 605 A 300 nA 1.456 kW SP6C - 40 C + 125 C
Microchip Technology APTGX600DU120T6G
Microchip Technology IGBT Modules PM-IGBT-TFS-SP6C
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 3
Mult.: 1

Power Modules Dual Common Emitter 1.2 kV 1.8 V 805 A 400 nA 1.923 kW SP6C - 40 C + 125 C