SMT-6 Bipolar Transistors - BJT

Results: 3
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Toshiba Bipolar Transistors - BJT SMV PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Datasheet
6.000Expected 9/11/2026
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SMT-6 PNP Dual 150 mA 50 V 50 V 5 V 100 mV 300 mW 80 MHz - 55 C + 125 C Reel, Cut Tape
Toshiba Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=300mW F=1MHz
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SMT-6 NPN Single 300 mA 20 V 50 V 20 V 42 mV 200 mW 30 MHz - 55 C + 150 C HN1C03 Reel, Cut Tape
Toshiba Bipolar Transistors - BJT US6 PLN (LF) TRANSISTOR Pd=200mW F=80MHz
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
: 3.000
Si SMD/SMT SMT-6 NPN Dual 150 mA 50 V 60 V 5 V 100 mV 200 mW 80 MHz - 55 C + 125 C Reel, Cut Tape