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Mfr.	Mfr. No:	Qty	Ext Total

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QPD1009TR7

Qorvo

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See Product Specifications

Mouser No:

772-QPD1009TR7

Mfr. No:

QPD1009TR7

Mfr.:

Qorvo

Description:

GaN FETs DC-4 GHz, 15W, 50V GaN RF Tr

Datasheet:

QPD1009TR7 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	GaN FETs
Mounting Style:	SMD/SMT
Package/Case:	SMD-16
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	145 V
Id - Continuous Drain Current:	1.6 A
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Pd - Power Dissipation:	16 W
Maximum Operating Frequency:	4 GHz
Minimum Operating Frequency:	1 GHz
Technology:	GaN
Brand:	Qorvo
Configuration:	Single
Gain:	26.8 dB
Output Power:	42.4 dBm
Packaging:	Reel
Product:	RF Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	500
Subcategory:	Transistors
Type:	GaN RF Transistor

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Datasheet

QPD1009TR7 Datasheet (PDF)

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Compliance Codes

USHTS:: 8542390090
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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QPD1011A GaN Input Matched Transistors

7W (P_3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.

QPD1004A GaN Input Matched Transistors

25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.

QPD1035 GaN RF Power Transistors

40W discrete GaN on SiC HEMTs operating from DC to 6GHz with a 50V supply.

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 16 Weeks Estimated factory production time.

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Minimum: 500 Multiples: 500

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 500)
	36,05 €	18.025,00 €