QFN-16 GaN FETs

Results: 8
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Maximum Operating Frequency Minimum Operating Frequency Technology
Qorvo GaN FETs 4-6GHz 5W 32Volt P3dB 38.4 dBm GaN 40In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 32 V 250 mA - 40 C + 85 C 6 GHz 4 GHz GaN-on-SiC
Qorvo GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN 31In Stock
50Expected 10/19/2026
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 400 mA - 2.8 V - 40 C + 85 C 13.5 W 4 GHz 0 Hz GaN
Qorvo GaN FETs DC-12GHz 10W 32V GaN 435In Stock
Min.: 1
Mult.: 1
: 100

SMD/SMT QFN-16 N-Channel 32 V 610 mA - 40 C + 85 C 13.8 W 12 GHz 0 Hz GaN
Qorvo GaN FETs 30MHZ-3GHz 5W 50 Ohm Gain 18dB@2GHz 32V 712In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 P-Channel 32 V 600 mA 7.5 W 3 GHz 30 MHz GaN
Qorvo GaN FETs 8-12GHz 5W GaN PAE 50% Gain 13dB 1.268In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 326 mA + 225 C 8.4 W 12 GHz 0 Hz GaN
Qorvo GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN 44In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 700 mA - 2.8 V - 40 C + 85 C 17.5 W 4 GHz 0 Hz GaN
Qorvo GaN FETs DC-12 GHz, 10W, 32V GaN RF Tr Non-Stocked Lead-Time 16 Weeks
Min.: 1.000
Mult.: 1.000
: 1.000
SMD/SMT QFN-16 N-Channel 1 Channel 100 V 610 mA - 40 C + 85 C 17.5 W GaN-on-SiC
Qorvo GaN FETs .03-3GHz,5W,32V,50Ohm GaN RF I/P-Mtch T Non-Stocked Lead-Time 16 Weeks
Min.: 2.500
Mult.: 2.500
: 2.500

SMD/SMT QFN-16 N-Channel 1 Channel 32 V 600 mA - 7 V, + 2 V - 40 C + 85 C 7.5 W GaN-on-SiC