360 W RF MOSFET Transistors

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Qty. RoHS ECAD Model Transistor Polarity
Technology
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package/Case
Packaging
Ampleon RF MOSFET Transistors BLC10G18XS-360AV/SOT1258/REELD
Datasheet
Non-Stocked Lead-Time 13 Weeks
Min.: 100
Mult.: 100
: 100

Dual N-Channel LDMOS 65 V 88 mOhms, 148 mOhms 1.805 GHz to 1.88 GHz 15.4 dB 360 W - 40 C + 125 C SMD/SMT SOT1258-4-7 Reel
Ampleon RF MOSFET Transistors BLC10G18XS-360AVT/SOT1258/TRAYD
Datasheet
Non-Stocked Lead-Time 13 Weeks
Min.: 60
Mult.: 60

Dual N-Channel LDMOS 65 V 88 mOhms, 148 mOhms 1.805 GHz to 1.88 GHz 15.4 dB 360 W - 40 C + 125 C SMD/SMT SOT1258-4-7 Tray