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CGHV1F025S

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See Product Specifications

Mouser No:

941-CGHV1F025S

Mfr. No:

CGHV1F025S

Mfr.:

MACOM

Description:

GaN FETs GaN HEMT DC-15GHz, 25 Watt

Datasheet:

CGHV1F025S Datasheet (PDF)

ECAD Model:

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More Information

Learn more about MACOM CGHV1F025S

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	MACOM
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	DFN-12
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	2 A
Vgs th - Gate-Source Threshold Voltage:	- 3 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Maximum Operating Frequency:	15 GHz
Minimum Operating Frequency:	0 Hz
Technology:	GaN
Brand:	MACOM
Configuration:	Single
Development Kit:	CGHV1F025S-TB
Gain:	11 dB
Moisture Sensitive:	Yes
Output Power:	25 W
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	GaN HEMTs
Product Type:	GaN FETs
Factory Pack Quantity:	250
Subcategory:	Transistors
Transistor Type:	GaN HEMT
Type:	GaN SiC HEMT
Vgs - Gate-Source Breakdown Voltage:	- 10 V to 2 V
Unit Weight:	3,772 g

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Datasheet

CGHV1F025S Datasheet (PDF)

PCN

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8542319090
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8532331000
MXHTS:: 8541299900
ECCN:: 3A001.b.3.b.2

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.