SiC MOSFETs – Mouser Estonia

CoolSiC™ MOSFETs

Infineon CoolSiC™ MOSFETs are built on a state-of-the-art trench semiconductor process optimized to allow for both the lowest losses in the application and the highest reliability in operation. The discrete CoolSiC portfolio in TO- and SMD-housings comes in 650V, 1200V, and 1700V voltage classes, with on-resistance ratings from 27mΩ up to 1000mΩ. CoolSiC trench technology enables a flexible parameter set, which is used to implement application-specific features in respective product portfolios. These features include gate-source voltages, avalanche specification, short-circuit capability, or internal body diode rated for hard commutation.

Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (EUR) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package/Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Tradename
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package IMZ120R220M1HXKSA1 Infineon Technologies 1: 6,95 € 22In Stock 2.160On Order NRND	Mfr. Part No. IMZ120R220M1HXKSA1 Mouser Part No 726-IMZ120R220M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package	Datasheet	22In Stock 2.160On Order On Order Ship Dates Mfr. No: IMZ120R220M1HXKSA1 Stock: 22 Can Dispatch Immediately On Order: 960 Expected 3/18/2027 1.200 Expected 4/29/2027 Factory Lead Time: 53 Weeks	6,95 € 3,67 € 3,38 € 2,95 €	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	13 A	220 mOhms	- 7 V, + 23 V	5.7 V	8.5 nC	- 55 C	+ 150 C	75 W	Enhancement	CoolSiC
SiC MOSFETs CoolSiC MOSFET discrete 1200 V in TO247-4 package IMZ120R350M1HXKSA1 Infineon Technologies 1: 5,49 € 184In Stock NRND	Mfr. Part No. IMZ120R350M1HXKSA1 Mouser Part No 726-IMZ120R350M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC MOSFET discrete 1200 V in TO247-4 package	Datasheet	184In Stock	5,49 € 3,11 € 2,86 € 2,59 €	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	4.7 A	350 mOhms	- 7 V, + 23 V	5.7 V	5.3 nC	- 55 C	+ 150 C	60 W	Enhancement	CoolSiC
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package IMZ120R030M1HXKSA1 Infineon Technologies 1: 13,91 € 2.160On Order NRND	Mfr. Part No. IMZ120R030M1HXKSA1 Mouser Part No 726-IMZ120R030M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package	Datasheet	2.160On Order On Order Ship Dates Mfr. No: IMZ120R030M1HXKSA1 Stock: 0 On Order: 720 Expected 10/22/2026 1.440 TBD Factory Lead Time: 52 Weeks	13,91 € 8,80 € 8,33 €	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	1.2 kV	56 A	40 mOhms	- 7 V, + 23 V	5.7 V	63 nC	- 55 C	+ 150 C	227 W	Enhancement	CoolSiC
SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package IMW120R060M1HXKSA1 Infineon Technologies 1: 9,53 € 1.440On Order NRND	Mfr. Part No. IMW120R060M1HXKSA1 Mouser Part No 726-IMW120R060M1HXKS NRND	Infineon Technologies	SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-3 package	Datasheet	1.440On Order On Order Ship Dates Mfr. No: IMW120R060M1HXKSA1 Stock: 0 On Order: 240 Expected 10/26/2026 1.200 Expected 10/29/2026 Factory Lead Time: 53 Weeks	9,53 € 6,16 € 5,17 € 4,62 €	Min.: 1 Mult.: 1	Through Hole	TO-247-3	1 Channel	1.2 kV	36 A	78 mOhms	- 7 V, + 23 V	5.7 V	31 nC	- 55 C	+ 150 C	150 W	Enhancement	CoolSiC
SiC MOSFETs SILICON CARBIDE MOSFET IMZA65R072M1HXKSA1 Infineon Technologies 1: 7,53 € Non-Stocked Lead-Time 53 Weeks NRND	Mfr. Part No. IMZA65R072M1HXKSA1 Mouser Part No 726-IMZA65R072M1HXKS NRND	Infineon Technologies	SiC MOSFETs SILICON CARBIDE MOSFET Learn More about Infineon Technologies infineon coolsic mosfets 650v	Datasheet	Non-Stocked Lead-Time 53 Weeks	7,53 € 4,43 € 3,67 € 3,66 €	Min.: 1 Mult.: 1	Through Hole	TO-247-4	1 Channel	650 V	28 A	94 mOhms	- 5 V, + 23 V	5.7 V	22 nC	- 55 C	+ 150 C	96 W	Enhancement	CoolSiC