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SCS220AE2HRC11

Name: ROHM Semiconductor SCS220AE2HRC11
Brand: ROHM Semiconductor
SKU: 755-SCS220AE2HRC11
Price: 9.71 EUR
Availability: OutOfStock

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Mouser No:

755-SCS220AE2HRC11

Mfr. No:

SCS220AE2HRC11

Mfr.:

ROHM Semiconductor

Description:

SiC Schottky Diodes AECQ

Datasheet:

SCS220AE2HRC11 Datasheet (PDF)

ECAD Model:

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Learn more about ROHM Semiconductor SCS220AE2HRC11

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247N-3
Configuration:	Dual
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.55 V
Ifsm - Forward Surge Current:	76 A
Ir - Reverse Current:	200 uA
Maximum Operating Temperature:	+ 175 C
Vr - Reverse Voltage:	650 V
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	ROHM Semiconductor
Pd - Power Dissipation:	160 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Part # Aliases:	SCS220AE2HR

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Datasheet

SCS220AE2HRC11 Datasheet (PDF)

Specification Sheets

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Compliance Codes

TARIC:: 8541100000
CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100199
BRHTS:: 85411099
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

AEC-Q101 SiC Schottky Barrier Diodes

ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. ROHM SiC Power Devices also allow designers to use fewer components, further reducing design complexity.