TO-3P Si IGBTs

Results: 7
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Package/Case
Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Datasheet
700In Stock
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGWT30H60DFB Tube
STMicroelectronics IGBTs Trench gate H series 650V 80A HiSpd
Datasheet
320In Stock
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWT80H65DFB Tube
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGBT
Datasheet
742In Stock
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWT60H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Datasheet
464In Stock
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 168 W - 55 C + 175 C STGWT20H65FB Tube
STMicroelectronics IGBTs 1250V 20A trench gte field-stop IGBT
Datasheet
600Expected 10/30/2026
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 1.25 kV 2.55 V - 20 V, 20 V 40 A 259 W - 55 C + 175 C STGWT20IH125DF Tube
STMicroelectronics IGBTs 650V 40A HSpd trench gate field-stop IGB
Datasheet
Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWT40H65DFB Tube
STMicroelectronics IGBTs 650V 60A HSpd trench gate field-stop IGB
Datasheet
Lead-Time 22 Weeks
Min.: 1
Mult.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 40 C + 175 C STGWT60H65FB Tube