Silicon Carbide (SiC) Schottky Barrier Diodes

Microchip Technology Silicon Carbide (SiC) Schottky Barrier Diodes (SBD) offer dynamic and thermal performance over conventional Silicon (Si) power diodes. SiC devices offer a much greater dielectric breakdown field strength, higher bandgap, and higher thermal conductivity compared to Silicon-only devices. SiC SBDs feature zero forward and reverse recovery charges, reducing diode switching losses. These devices also offer temperature-independent switching, ensuring stable high-temperature performance.

Results: 11
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4
Datasheet
258In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 103 A 31 mOhms - 10 V, + 23 V 1.8 V 232 nC - 55 C + 175 C 500 W Enhancement
Microchip Technology SiC MOSFETs FG, SIC MOSFET, TO-247 4-LEAD
Datasheet
982In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 77 A 44 mOhms - 10 V, + 23 V 1.9 V 99 nC - 55 C + 175 C 283 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-268
Datasheet
108In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-268-3 N-Channel 1 Channel 1.7 kV 59 A 35 mOhms - 10 V, + 23 V 3.25 V 178 nC - 55 C + 175 C 278 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-247-4
Datasheet
49In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 112 A 19 mOhms - 10 V, + 23 V 1.9 V 215 nC - 55 C + 175 C 524 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 700 V 60 mOhm TO-247-4
Datasheet
55In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 700 V 39 A 75 mOhms - 10 V, + 23 V 1.9 V 56 nC - 55 C + 175 C 143 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 80 mOhm TO-247-4
Datasheet
53In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 37 A 80 mOhms - 10 V, + 23 V 2.8 V 64 nC - 55 C + 175 C 200 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-268
Datasheet
139In Stock
Min.: 1
Mult.: 1

SMD/SMT D3PAK-3 N-Channel 1 Channel 1.7 kV 4.4 A 750 mOhms - 10 V, + 23 V 3.25 V 11 nC - 55 C + 175 C 63 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247-4
Datasheet
3In Stock
510Expected 10/12/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.7 kV 68 A 35 mOhms - 10 V, + 23 V 3.25 V 178 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 35 mOhm TO-247
Datasheet
100Expected 9/15/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 68 A 45 mOhms - 10 V, + 23 V 1.8 V 178 nC - 55 C + 175 C 370 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1700 V 750 mOhm TO-247
Datasheet
989Expected 8/10/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 5 A 750 mOhms - 10 V, + 23 V 3.25 V 11 nC - 55 C + 175 C 68 W Enhancement
Microchip Technology SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 66 A 40 mOhms - 10 V, + 23 V 2.6 V 137 nC - 55 C + 175 C 323 W Enhancement