GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Vgs th - Gate-Source Threshold Voltage Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation
Qorvo GaN FETs DC-3.6GHz GaN 90W 48V 54In Stock
Min.: 1
Mult.: 1
Reel: 100

SMD/SMT DFN-6 48 V - 40 C
Qorvo GaN FETs DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN 244In Stock
Min.: 1
Mult.: 1

SMD/SMT QFN-16 N-Channel 50 V 700 mA - 2.8 V - 40 C + 85 C 17.5 W
Qorvo GaN FETs DC-4GHz 45W GaN 48V 68In Stock
Min.: 1
Mult.: 1
Reel: 250

SMD/SMT QFN-20 48 V - 40 C 45 W