RF MOSFET Transistors

Results: 7
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Rds On - Drain-Source Resistance Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source 70In Stock
Min.: 1
Mult.: 1

N-Channel Si 6.5 A 1 kV 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source 121In Stock
Min.: 1
Mult.: 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 150 W 65 MHz TO-247 Common Source 70In Stock
Min.: 1
Mult.: 1

N-Channel Si 14 A 500 V 65 MHz 13 dB 150 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source 37In Stock
Min.: 1
Mult.: 1

N-Channel Si 9 A 500 V 100 MHz 15 dB 100 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 500 V 100 W 100 MHz TO-247 Common Source 5In Stock
540On Order
Min.: 1
Mult.: 1

N-Channel Si 9 A 500 V 100 MHz 15 dB 100 W - 55 C + 150 C Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264 Non-Stocked Lead-Time 24 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 Tube

Microchip Technology RF MOSFET Transistors RF MOSFET (VDMOS) 1000 V 300 W 45 MHz TO-264 Non-Stocked Lead-Time 24 Weeks
Min.: 25
Mult.: 25

N-Channel Si 13 A 1 kV 1 Ohms 45 MHz 16 dB 300 W - 55 C + 150 C Through Hole TO-247-3 Tube