1EDI3040ASXUMA1

Infineon Technologies
726-1EDI3040ASXUMA1
1EDI3040ASXUMA1

Mfr.:

Description:
Gate Drivers Automotive qualified 1ch reinforced isolated gate driver made for leading edge IGBT & SiC traction inverters

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies 1EDI3040ASXUMA1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Gate Driver
Single
SMD/SMT
LFDSO-36
1 Driver
1 Output
20 A
Inverting, Non-Inverting
Reel
Cut Tape
Brand: Infineon Technologies
Moisture Sensitive: Yes
Product Type: Gate Drivers
Factory Pack Quantity: 2000
Subcategory: PMIC - Power Management ICs
Technology: SiC
Tradename: EiceDRIVER
Part # Aliases: 1EDI3040AS SP005910755
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Attributes selected: 0

Datasheet

Models

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Compliance Codes
USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
Indonesia
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ High-Voltage Gate Driver ICs

Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs for Electric Vehicle (EV) applications include automotive-qualified IGBT driver ICs and SiC MOSFET driver ICs. The Infineon Technologies EiceDRIVER™ High-Voltage Gate Driver ICs provide galvanic isolation and bidirectional signal transmission with high ambient temperature capability. The ICs enable extremely short propagation delays and support IGBT and SiC technologies up to 1200V. The devices incorporate key features/parameters to drive SiC MOSFETs such as an enhanced switching behavior (extended CMTI capability, fast propagation delay, switching frequency), wide output-side supply range, short internal dead time, and DESAT/OCP threshold level adaptation. Advanced monitoring and protection features facilitate the implementation of ISO 26262 functional safety requirements and provide stable operation in harsh EMC environments.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
85
Expected 11/19/2026
875
115
Expected 7/29/2027
760
TBD
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,04 € 5,04 €
3,86 € 38,60 €
3,56 € 89,00 €
3,24 € 324,00 €
3,11 € 777,50 €
Full Reel (Order in multiples of 2000)
2,85 € 5.700,00 €

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