HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 500V/80A
Datasheet
Non-Stocked Lead-Time 35 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 80 A 65 mOhms - 30 V, 30 V 3.5 V 200 nC - 55 C + 150 C 1.25 kW Enhancement HiPerFET Tube
IXYS MOSFETs 650V/80A Ultra Junction X2-Class
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 650 V 80 A 38 mOhms - 30 V, 30 V 2.7 V 140 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-264(3)
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 90 A 38 mOhms - 30 V, 30 V 2.5 V 210 nC - 55 C + 150 C 1.1 kW Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 63 A 43 mOhms - 30 V, 30 V 3 V 267 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs N-Channel: Power MOSFET w/Fast Diode
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 108 A 16 mOhms - 20 V, 20 V 2.5 V 268 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 30 Amps 1200V 0.35 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 18 A 380 mOhms - 30 V, 30 V - 55 C + 150 C 357 W Enhancement HiPerFET Tube
IXYS MOSFETs 32 Amps 1200V
Datasheet
Non-Stocked Lead-Time 32 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1.2 kV 24 A 340 mOhms - 30 V, 30 V - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 38 Amps 1000V 0.21 Rds
Datasheet
Non-Stocked Lead-Time 28 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 29 A 230 mOhms - 30 V, 30 V 3.5 V 350 nC - 55 C + 150 C 520 W Enhancement HiPerFET Tube
IXYS MOSFETs 40 Amps 1100V 0.2800 Rds
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1.1 kV 21 A 280 mOhms - 30 V, 30 V - 55 C + 150 C 357 W Enhancement HiPerFET Tube
IXYS MOSFETs 42 Amps 800V 0.15 Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 40 A 150 mOhms - 30 V, 30 V 5 V 250 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 82 Amps 600V 0.78 Ohm Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 82 A 78 mOhms - 30 V, 30 V 5 V 240 nC - 55 C + 150 C 625 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 0V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 150 V 102 A 18 mOhms HiPerFET Tube
IXYS MOSFETs 650V/12A OVERMOLDED TO-220
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFETs 130 Amps 100V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 100 V 130 A 9.1 mOhms HiPerFET Tube
IXYS MOSFETs Trench T2 HiperFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 130 A 9.1 mOhms - 20 V, 20 V 4.5 V 130 nC - 55 C + 175 C 360 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 850 V 14 A 550 mOhms - 30 V, 30 V 3.5 V 30 nC - 55 C + 150 C 460 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChHiPerFET-Polar3 TO-220AB/FP
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 470 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 347 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP
Datasheet
Non-Stocked
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-220
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A OVERMOLDED TO-220
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 36 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChHiPerFET-Polar3 TO-220AB/FP
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 20 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 380 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar3 HiPerFET Power MOSFET
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 500 V 8 A 300 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 58 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChTrenchGate-Gen2 TO-220AB/FP
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 50

Si Through Hole TO-220-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP
Datasheet
Non-Stocked
Min.: 300
Mult.: 50
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs 60V/270A TrenchT3
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 270 A 3.1 mOhms - 20 V, 20 V 2 V 200 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube