HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 230 mOhms - 30 V, 30 V 2.5 V 35 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/18A TO-247
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 18 A 200 mOhms - 30 V, 30 V 3 V 29 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 60V/220A TrenchT3
Datasheet
Non-Stocked
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 60 V 220 A 4 mOhms - 20 V, 20 V 2 V 136 nC - 55 C + 175 C 440 W Enhancement HiPerFET Tube

IXYS MOSFETs 230 Amps 75V
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 75 V 230 A 4.2 mOhms - 20 V, 20 V 2 V 178 nC - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs 230Amps 100V
Datasheet
Lead-Time 23 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 100 V 230 A 4.7 mOhms HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 24 A 175 mOhms - 30 V, 30 V 2.5 V 47 nC - 55 C + 150 C 400 W Enhancement HiPerFET Tube
IXYS MOSFETs 1000V 26A TO-247 Power MOSFET
Datasheet
Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 8 A 320 mOhms - 30 V, 30 V 3.5 V 113 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 300
Mult.: 30
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 155 mOhms - 30 V, 30 V 2.5 V 56 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs TO247 850V 30A N-CH XCLASS
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 30 A 220 mOhms - 30 V, 30 V 3.5 V 68 nC - 55 C + 150 C 695 W Enhancement HiPerFET Tube

IXYS MOSFETs 500V 40A
Datasheet
Non-Stocked Lead-Time 44 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 500 V 40 A 140 mOhms - 30 V, 30 V - 55 C + 150 C 500 W Enhancement HiPerFET Tube

IXYS MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 40 A 145 mOhms - 30 V, 30 V 3.5 V 98 nC - 55 C + 150 C 860 W Enhancement HiPerFET Tube
IXYS MOSFETs TO247 300V 46A N-CH TRENCH
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si HiPerFET Tube

IXYS MOSFETs Power MOSFET AEC-Q101 Qualified
Datasheet
Non-Stocked
Min.: 300
Mult.: 30

Si AEC-Q101 HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 73 mOhms - 30 V, 30 V 2.5 V 116 nC - 55 C + 150 C 660 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-247AD
Datasheet
Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 60 A 55 mOhms - 30 V, 30 V 2.5 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs 650V/60A TO-247-4L
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 52 mOhms - 30 V, 30 V 3.5 V 108 nC - 55 C + 150 C 780 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 200V/70A
Datasheet
Lead-Time 26 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 70 A 40 mOhms - 30 V, 30 V 3.5 V 67 nC - 55 C + 150 C 690 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 300V/70A
Datasheet
Non-Stocked Lead-Time 31 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 70 A 54 mOhms - 30 V, 30 V 98 nC 830 W HiPerFET Tube
IXYS MOSFETs TO247 150V 76A N-CH TRENCH
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 76 A 22 mOhms - 20 V, 20 V 2.5 V 97 nC - 55 C + 150 C 350 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar3 HiPerFET Power MOSFET Non-Stocked
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel HiPerFET Tube

IXYS MOSFETs Trench HiperFETs Power MOSFET
Datasheet
Non-Stocked Lead-Time 23 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 300 V 94 A 36 mOhms HiPerFET Tube

IXYS MOSFETs 96 Amps 150V 0.024 Rds
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 96 A 24 mOhms - 20 V, 20 V - 55 C + 175 C 480 W Enhancement HiPerFET Tube

IXYS MOSFETs TO247 850V 9.5A N-CH XCLASS
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 850 V 9.5 A 360 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 110 W Enhancement HiPerFET Tube

IXYS MOSFETs 250V/44A Ultra Junct ion X3-Class MOSFET
Datasheet
Non-Stocked Lead-Time 29 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 250 V 44 A 18 mOhms - 20 V, 20 V 2.5 V 83 nC - 55 C + 150 C 104 W Enhancement HiPerFET Tube
IXYS MOSFETs 102 Amps 300V 0.033 Rds
Datasheet
Non-Stocked Lead-Time 37 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 300 V 102 A 33 mOhms - 20 V, 20 V 5 V 224 nC - 55 C + 150 C 700 W Enhancement HiPerFET Tube