BJT DFN-Packaged Power Bipolar Transistors

Nexperia BJT DFN-Packaged Power Bipolar Transistors offer a small form factor that uses about 75% less board space and allows more design flexibility. These bipolar transistors feature reduced parasitic inductance and capacitance with an improved, low thermal resistance, enabling higher reliability. The BJT components are ideal for applications where space is at a premium. Applications include mobile devices, wearables, automotive sensors, and camera modules.

Results: 77
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Configuration Maximum DC Collector Current Collector- Emitter Voltage VCEO Max Collector- Base Voltage VCBO Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Pd - Power Dissipation Gain Bandwidth Product fT Minimum Operating Temperature Maximum Operating Temperature Qualification Series Packaging
Nexperia Bipolar Transistors - BJT SOT1061 60V 3A PNP BJT
5.998Expected 6/7/2027
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT DFN-2020D-3 PNP Single 60 V 80 V 8 V 260 mV 2.5 W 65 MHz - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
Nexperia Bipolar Transistors - BJT BC51-10PAS-Q/SOT1061 /HUSON3 Non-Stocked Lead-Time 26 Weeks
Min.: 1
Mult.: 1
: 3.000

Si SMD/SMT SOT-1061D-3 PNP Single 2 A 45 V 45 V 5 V 500 mV 1.65 W 145 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel