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1EDB7275FXUMA1

Name: Infineon 1EDB7275FXUMA1
Brand: Infineon Technologies
SKU: 726-1EDB7275FXUMA1
Price: 1.41 EUR
Availability: InStock

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Mouser No:

726-1EDB7275FXUMA1

Mfr. No:

1EDB7275FXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers ISOLATED DRIVER

Datasheet:

1EDB7275FXUMA1 Datasheet (PDF)

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Learn more about Infineon Technologies 1EDB7275FXUMA1

In Stock: 10.878

Stock:: 10.878

Can Dispatch Immediately

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On Order:: 7.500

Expected 5/4/2026
Factory Lead Time:: 39

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,41 €	1,41 €
	1,03 €	10,30 €
	0,937 €	23,43 €
	0,832 €	83,20 €
	0,782 €	195,50 €
	0,751 €	375,50 €
	0,727 €	727,00 €
Full Reel (Order in multiples of 2500)
	0,676 €	1.690,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	Isolated Gate Drivers
Mounting Style:	SMD/SMT
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	9.8 A
Supply Voltage - Min:	3 V
Supply Voltage - Max:	15 V
Rise Time:	8.3 ns
Fall Time:	5 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	DE
Moisture Sensitive:	Yes
Product Type:	Gate Drivers
Factory Pack Quantity:	2500
Subcategory:	PMIC - Power Management ICs
Tradename:	EiceDRIVER
Part # Aliases:	1EDB7275F SP005351350

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Datasheet

1EDB7275FXUMA1 Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542310030
ECCN:: EAR99

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CoolGaN™ Gallium Nitride HEMTs

Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages, including ultimate efficiency, reliability, power density, and higher quality compared to silicon. CoolGaN transistors are built with the most reliable technology and designed for the highest efficiency and power density in switch mode power supplies. The devices work similarly to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.