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Vds - Drain-Source Breakdown Voltage

Id - Continuous Drain Current

Rds On - Drain-Source Resistance

Vgs - Gate-Source Voltage

Vgs th - Gate-Source Threshold Voltage

Qg - Gate Charge

Pd - Power Dissipation

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Select	Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (EUR) Filter the results in the table by unit price based on your quantity.	Qty.	RoHS	ECAD Model	Technology	Mounting Style	Package/Case	Transistor Polarity	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Packaging
	MOSFETs HIGH POWER_NEW IPW65R060CFD7XKSA1 Infineon Technologies 1: 7,77 € 268In Stock NRND	Mfr. Part No. IPW65R060CFD7XKSA1 Mouser Part No 726-IPW65R060CFD7SA1 NRND	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	268In Stock	7,77 € 4,65 € 3,92 € 3,58 €	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	3.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R041CFD7XKSA1 Infineon Technologies 1: 8,51 € 300In Stock	Mfr. Part No. IPP65R041CFD7XKSA1 Mouser Part No 726-IPP65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	300In Stock	8,51 € 5,25 € 4,55 € 4,08 €	Min.: 1 Mult.: 1			Si	Through Hole		N-Channel	1 Channel	650 V	50 A	41 mOhms	20 V	4.5 V	102 nC	- 55 C	+ 150 C	227 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R029CFD7XKSA1 Infineon Technologies 1: 10,28 € 136In Stock	Mfr. Part No. IPW65R029CFD7XKSA1 Mouser Part No 726-IPW65R029CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	136In Stock	10,28 € 6,98 € 6,80 €	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPZA65R029CFD7XKSA1 Infineon Technologies 1: 12,95 € 181In Stock	Mfr. Part No. IPZA65R029CFD7XKSA1 Mouser Part No 726-IPZA65R029CFD7XK	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	181In Stock	12,95 € 7,29 € 7,16 €	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-4	N-Channel	1 Channel	650 V	69 A	29 mOhms	20 V	4.5 V	145 nC	- 55 C	+ 150 C	305 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPP65R060CFD7XKSA1 Infineon Technologies 1: 6,97 € 71In Stock	Mfr. Part No. IPP65R060CFD7XKSA1 Mouser Part No 726-IPP65R060CFD7SA1	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	71In Stock	6,97 € 3,77 € 3,46 € 3,17 €	Min.: 1 Mult.: 1			Si	Through Hole	TO-220-3	N-Channel	1 Channel	650 V	36 A	60 mOhms	10 V	4.5 V	68 nC	- 55 C	+ 150 C	171 W	Enhancement	Tube
	MOSFETs HIGH POWER_NEW IPW65R041CFD7XKSA1 Infineon Technologies 1: 9,40 € 198In Stock 480Expected 10/15/2026	Mfr. Part No. IPW65R041CFD7XKSA1 Mouser Part No 726-IPW65R041CFD7XKS	Infineon Technologies	MOSFETs HIGH POWER_NEW Learn More about Infineon Technologies infineon 650v cfd7 sj power mosfets	Datasheet	198In Stock 480Expected 10/15/2026	9,40 € 5,12 € 4,74 € 4,71 €	Min.: 1 Mult.: 1			Si	Through Hole	TO-247-3	N-Channel	1 Channel	700 V	68.5 A	41 mOhms	20 V	4 V	102 nC	- 55 C	+ 150 C	500 W	Enhancement	Tube