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RQ3L060BGTB1

Name: ROHM Semiconductor RQ3L060BGTB1
Brand: ROHM Semiconductor
SKU: 755-RQ3L060BGTB1
Price: 1.14 EUR
Availability: InStock

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Mouser No:

755-RQ3L060BGTB1

Mfr. No:

RQ3L060BGTB1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs HSMT8 N-CH 60V 15.5A

Datasheet:

RQ3L060BGTB1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RQ3L060BGTB1

In Stock: 2.517

Stock:: 2.517 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,14 €	1,14 €
	0,739 €	7,39 €
	0,504 €	50,40 €
	0,43 €	215,00 €
	0,392 €	392,00 €
Full Reel (Order in multiples of 3000)
	0,352 €	1.056,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	HSMT-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	15.5 A
Rds On - Drain-Source Resistance:	38 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	5.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	14 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4.8 ns
Forward Transconductance - Min:	4 S
Product Type:	MOSFETs
Rise Time:	4.3 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18.5 ns
Typical Turn-On Delay Time:	7.4 ns

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Datasheet

RQ3L060BGTB1 Datasheet

Specification Sheets

Datasheet - Chinese (English language)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

RQ3L060BG Power MOSFET

ROHM Semiconductor RQ3L060BG Power MOSFET features 60V drain-source voltage (V_DSS) and ±15.5A continuous drain current. This N-channel MOSFET offers 38mΩ low on-resistance (R_DS(on)) and power dissipation of 14W. The RQ3L060BG MOSFET operates within the -55°C to 150°C operating junction and storage temperature range and is available in a Halogen-free, High-Power Small Mold Package (HSMT8). This RoHS-compliant device incorporates Pb-free plating. Typical applications include switching, motor drives and DC/DC converters.