FF06MR12A04MA2AKSA1

Infineon Technologies
726-FF06MR12A04MA2AK
FF06MR12A04MA2AKSA1

Mfr.:

Description:
Discrete Semiconductor Modules HybridPACK DSC S module with SiC MOSFET and NTC

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 82

Stock:
82 Can Dispatch Immediately
Factory Lead Time:
44 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
137,33 € 137,33 €
104,56 € 1.045,60 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Discrete Semiconductor Modules
RoHS:  
Modules
1 N-Channel
SiC
5.15 V
- 5 V, + 20 V
Press Fit
HybridPACK
- 40 C
+ 175 C
Tube
Brand: Infineon Technologies
Configuration: Single
Fall Time: 53 ns
Id - Continuous Drain Current: 190 A
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 14.5 mOhms
Rise Time: 25 ns
Factory Pack Quantity: 120
Subcategory: Discrete and Power Modules
Tradename: CoolSiC
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 228 ns
Typical Turn-On Delay Time: 32 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4.55 V
Part # Aliases: FF06MR12A04MA2 SP005558866
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Compliance Codes
TARIC:
8541210000
CNHTS:
8504409100
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
China
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

HybridPACK™ DSC S Modules with SiC MOSFET & NTC

Infineon Technologies HybridPACK™ DSC S Modules with SiC MOSFET and NTC are high-performance power modules designed for demanding automotive applications, particularly in hybrid and electric vehicles (xEVs). This compact half-bridge module integrates silicon carbide (SiC) MOSFETs and an NTC thermistor, enabling superior efficiency and thermal performance. With a blocking voltage of 1200V and a nominal current rating of 190A, the modules support high-speed switching with low conduction and switching losses, thanks to the inherent advantages of SiC technology.