SBR20E100CT

Diodes Incorporated
621-SBR20E100CT
SBR20E100CT

Mfr.:

Description:
Schottky Diodes & Rectifiers 20A SBR 100Vrrm 120Vrwm 180Ifsm

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,568 € 0,57 €
0,319 € 3,19 €
0,28 € 28,00 €
0,268 € 134,00 €
0,259 € 259,00 €
0,258 € 1.290,00 €

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: Schottky Diodes & Rectifiers
RoHS:  
REACH - SVHC:
Schottky Rectifiers
Through Hole
TO-220AB-3
Dual Anode Common Cathode
Si
20 A
100 V
850 mV
250 A
100 uA
- 65 C
+ 175 C
SBR20E100
Tube
Brand: Diodes Incorporated
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 50
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 100 V
Unit Weight: 1,850 g
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8504409190
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

SBR20E100x Super Barrier Rectifiers

Diodes Inc. SBR20E100x Super Barrier Rectifiers deliver low forward voltage drop (VF) with excellent low reverse leakage stability at high temperatures. These rectifiers are composed of molded plastic in a TO-220AB case with matte tin finish terminals annealed over a copper lead frame. Patented SBR technology provides good avalanche capability ensuring rugged and reliable end applications. SBR20E100x rectifiers are designed to be used as rectification, freewheeling, or polarity protection diodes for DC-DC converters and AC-DC adapters/chargers. The Halogen and Antimony free green devices include a lead-free finish and ROHS compliance.

SBR® Super Barrier Rectifiers

Diodes Inc SBR® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.