SGT3D5R10MEB
See Product Specifications
Mfr.:
Description:
GaN FETs 100 V, 2.9 mOhm typ., 201 A, e-mode PowerGaN transistor
Datasheet
- USHTS:
- 8541290055
- ECCN:
- EAR99
- Country of Origin:
- China
- Assembly Country of Origin:
- Not available
- Country of Diffusion:
- Not available
In Stock: 343
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Stock:
-
343 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead Time:
-
24 Weeks Estimated factory production time for quantities greater than shown.

Estonia