NXH300B100H4Q2F2 Q2BOOST Module

onsemi NXH300B100H4Q2F2 Q2BOOST Module offers three channels, higher output power, and easy module mounting. Each channel contains two 1000V, 100A IGBTs, two 1200V, 30A SiC diodes, and two 1600V, 30A bypass diodes. The Q2BOOST Module provides excellent efficiency and thermal losses, with the flexibility to support different manufacturing processes.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
onsemi NXH300B100H4Q2F2S1G
onsemi IGBT Modules PIM 1500V 250KW Q2BOOST 36In Stock
Min.: 1
Mult.: 1
Tray
onsemi NXH300B100H4Q2F2SG
onsemi IGBT Modules MASS MARKET 250KW 1500V Q2 3 LEVEL BOOST
Datasheet
36In Stock
Min.: 1
Mult.: 1
IGBT Modules Tray
onsemi NXH300B100H4Q2F2PG
onsemi IGBT Modules MASS MARKET 250KW 1500V Q2 3 LEVEL BOOST
Datasheet
72Factory Stock Available
More Info Available
Min.: 36
Mult.: 36

SiC IGBT Modules Dual Common Source 1 kV 1.8 V 73 A 400 nA 194 W - 40 C + 150 C Tray