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SIHH080N60E-T1-GE3

Name: Vishay SIHH080N60E-T1-GE3
Brand: Vishay / Siliconix
SKU: 78-SIHH080N60ET1-GE3
Price: 5.05 EUR
Availability: InStock

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Mouser No:

78-SIHH080N60ET1-GE3

Mfr. No:

SIHH080N60E-T1-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PWRPK 600V 32A N-CH MOSFET

Datasheet:

SIHH080N60E-T1-GE3 Datasheet

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In Stock: 2.288

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	5,05 €	5,05 €
	3,41 €	34,10 €
	2,46 €	246,00 €
	2,43 €	1.215,00 €
Full Reel (Order in multiples of 3000)
	2,17 €	6.510,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK 8x8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	32 A
Rds On - Drain-Source Resistance:	80 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	42 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	184 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Product Type:	MOSFETs
Rise Time:	96 ns
Series:	SIHH E
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns

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Datasheet

SIHH080N60E-T1-GE3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiHH080N60E E Series Power MOSFETs

Vishay / Siliconix SiHH080N60E E Series Power MOSFETs provide 4th generation E series technology in a PowerPAK® 8 x 8 package. The SiHH080N60E MOSFETs utilize a low figure-of-merit (FOM) Ron x Qg and low effective capacitance (Co(er)). The Vishay / Siliconix SiHH080N60E E Series Power MOSFETs' reduced switching and conduction losses are optimized with a 650V drain-source voltage 63nC total gate charge.