QPD0011EVB1

Qorvo
772-QPD0011EVB1
QPD0011EVB1

Mfr.:

Description:
RF Development Tools 3.4-3.6GHz 40Wx80W GaN Transistor Pair

Product available only to OEM/EMS and design business customers. Product is not shipped to consumers in the EU or the UK

Availability

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Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:
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Pricing (EUR)

Qty. Unit Price
Ext. Price
945,00 € 945,00 €

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: RF Development Tools
Delivery Restrictions:
 Product available only to OEM/EMS and design business customers. Product is not shipped to consumers in the EU or the UK
RoHS:  
Evaluation Boards
RF Transistor
QPD0011
3.3 GHz to 3.6 GHz
Brand: Qorvo
For Use With: GaN HEMTs
Product Type: RF Development Tools
Series: QPD0011
Factory Pack Quantity: 1
Subcategory: Development Tools
Part # Aliases: QPD0011
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Attributes selected: 0

USHTS:
9030820000
ECCN:
EAR99

QPD0011EVB1 Evaluation Board

Qorvo QPD0011EVB1 Evaluation Board is a demonstration and development platform for the Qorvo QPD0011 30W/60W 48V GaN (Gallium Nitride) on SiC (Silicon Carbide) HEMT (High-Electron-Mobility Transistor). The QPD0011 is an asymmetric dual-path power amplifier transistor for Doherty applications. The QPD0011 features a 3.3GHz to 3.6GHz frequency range and a maximum Doherty gain of 13.3dB. In each path is a single-stage amplifier transistor. QPD0011 can deliver an average power of 15W in a Doherty configuration.