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SIRA99DP-T1-GE3

Name: Vishay SIRA99DP-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SIRA99DP-T1-GE3
Price: 2.96 EUR
Availability: InStock

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Mouser No:

78-SIRA99DP-T1-GE3

Mfr. No:

SIRA99DP-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs PPAKSO8 P-CH 30V 47.9A

Datasheet:

SIRA99DP-T1-GE3 Datasheet

ECAD Model:

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In Stock: 2.824

Stock:: 2.824

Can Dispatch Immediately

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On Order:: 6.000

Expected 11/2/2026
Factory Lead Time:: 33

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	2,96 €	2,96 €
	1,94 €	19,40 €
	1,35 €	135,00 €
	1,17 €	585,00 €
	1,12 €	1.120,00 €
Full Reel (Order in multiples of 3000)
	0,989 €	2.967,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-SO-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	195 A
Rds On - Drain-Source Resistance:	1.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 16 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	172.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	57 ns
Forward Transconductance - Min:	114 S
Product Type:	MOSFETs
Rise Time:	183 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	64 ns
Typical Turn-On Delay Time:	69 ns
Unit Weight:	506,600 mg

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Filter Document:

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

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