GAN039 CCPAK1212-Packaged Power GaN FETs

Nexperia GAN039 CCPAK1212-Packaged Power GaN FETs offer copper-clip package technology with low inductances, low switching losses, and high reliability. Wire-bond-free for optimized thermal and electrical performance, these devices provide a cascade configuration to eliminate the need for complicated drivers and controls. The surface-mount GAN039 FETs have top-side (CCPAK1212i) or traditional bottom-side (CCPAK1212) cooling to improve heat dissipation, providing added design flexibility. The CCPAK1212 and CCPAK1212i package styles feature a compact footprint. Flexible gull-wing leads provide robust board-level reliability for extreme temperature environments. Typical applications include servo motor drives, PV and UPS inverters, bridgeless totempole PFC, and soft switching converters.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode
Nexperia GaN FETs GAN039-650NTB/SOT8005/CCPAK121 599In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT CCPAK1212i-12 N-Channel 1 Channel 650 V 58.5 A 33 mOhms + 20 V 4.6 V 26 nC - 55 C + 150 C 250 W Enhancement
Nexperia GaN FETs GAN039-650NBB/SOT8000/CCPAK121 956In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT CCPAK1212-13 N-Channel 1 Channel 650 V 60 A 39 mOhms - 20 V, + 20 V 4.8 V 30 nC - 55 C + 175 C 300 W Enhancement