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QPD2025D

Name: Qorvo QPD2025D
Brand: Qorvo
SKU: 772-QPD2025D
Price: 10.09 EUR
Availability: OutOfStock

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Mouser No:

772-QPD2025D

Mfr. No:

QPD2025D

Mfr.:

Qorvo

Description:

RF JFET Transistors 0.25 mm Pwr pHEMT

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 20 Weeks Estimated factory production time.

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Minimum: 100 Multiples: 100

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 100)
	10,09 €	1.009,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Qorvo
Product Category:	RF JFET Transistors
RoHS:
Transistor Type:	pHEMT
Packaging:	Reel
Brand:	Qorvo
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Product Type:	RF JFET Transistors
Series:	QPD2025D
Factory Pack Quantity:	100
Subcategory:	Transistors

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TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541290065
ECCN:: EAR99

QPD2025D 250um Discrete GaAs pHEMT Die

Qorvo QPD2025D 250um Discrete GaAs pHEMT Die is developed using Qorvo's proven standard 0.25um power pHEMT production process. The process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D operates from DC to 20GHz with 24dBm typical output power at P1dB with a gain of 14dB and 58% power-added efficiency at 1dB compression. With this performance level, the device is ideal for high-efficiency applications. The protective overcoat layer with silicon nitride delivers environmental robustness and scratch protection.