NXH006P120MNF2PTG Half-Bridge SiC Module

onsemi NXH006P120MNF2PTG Half-Bridge SiC Module features two 6mΩ 1200V SiC MOSFET switches and a thermistor in an F2 package. The SiC MOSFET switches use M1 technology and are driven with an 18V to 20V gate drive. The NXH006P120MNF2 module provides improved reliability from planar technology and low die thermal resistance. Typical applications include DC-AC conversion, DC-DC conversion, energy storage systems, UPS, AC-DC conversion, electric vehicle charging stations, and solar inverters.

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Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Series
Packaging


onsemi MOSFET Modules PIM F2 6MOHM 1200V HALFBRIDGE SIC MODULE
Datasheet
44In Stock
Min.: 1
Mult.: 1

SiC Press Fit - 15 V, + 25 V - 40 C + 150 C NXH006P120MNF2 Tray
onsemi MOSFET Modules 1200V 6MOHM M3S SIC HALFBRIDGE WITH HPS DBC IN F2 MODULES
Datasheet
12In Stock
Min.: 1
Mult.: 1

SiC Press Fit PIM-36 N-Channel 1.2 kV 191 A 8 mOhms - 10 V, + 22 V 2.8 V - 40 C + 175 C 556 W NXH006P120M3F2PTHG Tray