SIJK5100E-T1-GE3

Vishay
78-SIJK5100E-T1-GE3
SIJK5100E-T1-GE3

Mfr.:

Description:
MOSFETs PWRPK 100V 417A

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 4.384

Stock:
4.384 Can Dispatch Immediately
Factory Lead Time:
3 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,45 € 5,45 €
3,79 € 37,90 €
2,77 € 277,00 €
Full Reel (Order in multiples of 1500)
2,35 € 3.525,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
PowerPAK-16
N-Channel
1 Channel
100 V
417 A
1.4 mOhms
- 20 V, 20 V
4 V
131 nC
- 55 C
+ 175 C
536 W
Enhancement
TrenchFET
Reel
Cut Tape
Brand: Vishay
Configuration: Single
Fall Time: 35 ns
Forward Transconductance - Min: 245 S
Product Type: MOSFETs
Rise Time: 18 ns
Series: SIJK5100E
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 54 ns
Typical Turn-On Delay Time: 41 ns
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TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

SiJK5100E N-Channel MOSFET

Vishay / Siliconix SiJK5100E N-Channel MOSFET is a TrenchFET® Gen V power MOSFET with 100V drain-source voltage. This MOSFET features 536W maximum power dissipation at +25°C, 487A continuous source-drain diode current at +25°C, and a single configuration. The SiJK5100E is UIS tested, lead free, and halogen free. Vishay / Siliconix SiJK5100E N-Channel MOSFET operates within a -55°C to +175°C temperature range. Typical applications include synchronous rectification, automation, power supplies, motor drive control, and battery management.