GP2T020A120H

SemiQ
148-GP2T020A120H
GP2T020A120H

Mfr.:

Description:
SiC MOSFETs 1200V, 18mOhm, TO-247-4L MOSFET

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In Stock: 48

Stock:
48 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,22 € 17,22 €
14,16 € 141,60 €
12,25 € 1.470,00 €
1.020 Quote

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
119 A
18 mOhms
- 10 V, + 25 V
4 V
216 nC
- 55 C
+ 175 C
564 W
Enhancement
Brand: SemiQ
Configuration: Single
Fall Time: 19 ns
Forward Transconductance - Min: 26 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 5 ns
Series: GP2T020A120
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 38 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541100000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GP2T020A120H 1200V SiC MOSFET

SemiQ GP2T020A120H 1200V SiC MOSFET can be combined with silicon carbide Schottky diodes to achieve optimal performance without the trade-offs made with Silicon devices. This MOSFET offers reduced switching losses, higher efficiency, reduced heat sink size, and increased power density. The GP2T020A120H MOSFET features high-speed switching, longer creepage distance, 564W power dissipation, and 800mJ single pulse avalanche energy. This MOSFET is ideal for designers working on EV charging, industrial controls, and HVAC systems. Typical applications include power factor correction, DC-DC converter primary switching, and synchronous rectification.